Sriram Krishnamoorthy portrait
  • Adjunct Assistant Professor, Elect & Computer Engineering

Publications

  • Siddharth Rajan (date unknown). Gallium Nitride (GaN): Physics, Devices, and Technology - Chapter 9: Gallium Nitride-Based Interband Tunnel Junctions. (pp. 299-320). Vol. 47, CRC Press. Accepted, .
  • Anamika Singh Pratiyush, Sriram Krishnamoorthy, Rangarajan Muralidharan, Siddharth Rajan, DN Nath (date unknown). “Advances in Ga2O3 solar-blind UV photodetectors”, In Gallium Oxide, pp. 369-399. Elsevier, 2019. Elsevier. Accepted, .
  • Bajaj S. (date unknown). Power switching transistors based on GaN and AlGaN channels. (pp. 16-20). WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications. Accepted, .
  • Yang J. (date unknown). Determination of trap energy levels in AlGaN/GaN HEMT. (pp. 79-80). Device Research Conference - Conference Digest, DRC. Accepted, .
  • Hung T. (date unknown). Interface charge engineering in GaN-based MIS-HEMTs. (pp. 147-150). 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. Accepted, .
  • Ramesh P. (date unknown). Fabrication and characterization of Gallium Nitride unimorphs for optical MEMS applications. (pp. 201-209). Vol. 1. ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems, SMASIS 2011. Accepted, .
  • Krishnamoorthy S. (date unknown). III-nitride tunnel diodes with record forward tunnel current density. Device Research Conference - Conference Digest, DRC. Accepted, .
  • Hung T. (date unknown). Study of interfacial charge properties and engineering of ALD dielectric/III-nitride interfaces. (pp. 191-194). 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. Accepted, .
  • Gopalan P. (date unknown). Ultrafast terahertz modulator based on metamaterial-integrated WSe2 thin-films. Vol. 2018-September. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. Accepted, .
  • Growden T. (date unknown). Methods for attaining high interband tunneling current in III-Nitrides. (pp. 163-164). Device Research Conference - Conference Digest, DRC. Accepted, .
  • Krishnamoorthy S. (date unknown). Record low tunnel junction specific resistivity (<3×10-4Ωcm2) in GaN inter-band tunnel junctions. (pp. 157-158). Device Research Conference - Conference Digest, DRC. Accepted, .
  • Yang Z. (date unknown). Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter. Vol. 2016-August. Device Research Conference - Conference Digest, DRC. Accepted, .
  • Bajaj S. (date unknown). Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics. Vol. 2016-August. Device Research Conference - Conference Digest, DRC. Accepted, .
  • Zhang Y. (date unknown). Sub 300 nm wavelength III-Nitride tunnel-injected ultraviolet LEDs. (pp. 69-70). Vol. 2015-August. Device Research Conference - Conference Digest, DRC. Accepted, .
  • Bajaj S. (date unknown). Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs. (pp. 33-34). Vol. 2015-August. Device Research Conference - Conference Digest, DRC. Accepted, .
  • Yang Z. (date unknown). Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors. (pp. 53-54). Vol. 2015-August. Device Research Conference - Conference Digest, DRC. Accepted, .
  • Bajaj S. (date unknown). Small-signal characteristics of graded AlGaN channel PolFETs. Device Research Conference - Conference Digest, DRC. Accepted, .
  • Hung T. (date unknown). Lateral energy band engineering of Al2O3/III-nitride interfaces. (pp. 131-132). Device Research Conference - Conference Digest, DRC. Accepted, .
  • Krishnamoorthy S. (date unknown). III-nitride tunnel junctions for efficient solid state lighting. Vol. 8986. Proceedings of SPIE - The International Society for Optical Engineering. Accepted, .
  • Krishnamoorthy S. (date unknown). Demonstration of forward inter-band tunneling in GaN by polarization engineering. Applied Physics Letters. Vol. 99. Accepted, .
  • Wang Y. (date unknown). Incident wavelength and polarization dependence of spectral shifts in β-Ga2O3 UV photoluminescence. Scientific Reports. Vol. 8. Accepted, .
  • Akyol F. (date unknown). Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content. Applied Physics Express. Vol. 10. Accepted, .
  • Gür E. (date unknown). Erratum: Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies (Applied Physics Letters (2011) 99 (092109)). Applied Physics Letters. Vol. 99. Accepted, .
  • Yang J. (date unknown). Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors. Applied Physics Letters. Vol. 103. Accepted, .
  • Krishnamoorthy S. (date unknown). Polarization-engineered GaN/InGaN/GaN tunnel diodes. Applied Physics Letters. Vol. 97. Accepted, .
  • Lee C. (date unknown). Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy. Applied Physics Letters. Vol. 111. Accepted, .
  • Lee C. (date unknown). Transferred large area single crystal MoS2field effect transistors. Applied Physics Letters. Vol. 107. Accepted, .
  • Zhang Y. (date unknown). Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes. Applied Physics Letters. Vol. 109. Accepted, .
  • Gür E. (date unknown). Deep level defects in N-rich and In-rich InxGa1−XN: in composition dependence. Superlattices and Microstructures. Vol. 99, 67-71. Accepted, .
  • Krishnamoorthy S. (date unknown). High current density 2D/3D MoS2/GaN Esaki tunnel diodes. Applied Physics Letters. Vol. 109. Accepted, .
  • Yang J. (date unknown). A study of electrically active traps in AlGaN/GaN high electron mobility transistor. Applied Physics Letters. Vol. 103. Accepted, .
  • Bajaj S. (date unknown). Density-dependent electron transport and precise modeling of GaN high electron mobility transistors. Applied Physics Letters. Vol. 107. Accepted, .
  • Krishnamoorthy S. (date unknown). InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes. Applied Physics Letters. Vol. 105. Accepted, .
  • Bajaj S. (date unknown). AlGaN channel field effect transistors with graded heterostructure ohmic contacts. Applied Physics Letters. Vol. 109. Accepted, .
  • Esposto M. (date unknown). Electrical properties of atomic layer deposited aluminum oxide on gallium nitride. Applied Physics Letters. Vol. 99. Accepted, .
  • Zhang Y. (date unknown). Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions. Applied Physics Letters. Vol. 109. Accepted, .
  • Lee E. (date unknown). Layer-transferred MoS2/GaN PN diodes. Applied Physics Letters. Vol. 107. Accepted, .
  • Ramesh P. (date unknown). Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications. Smart Materials and Structures. Vol. 21. Accepted, .
  • Akyol F. (date unknown). Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop. Applied Physics Letters. Vol. 103. Accepted, .
  • Bajaj S. (date unknown). Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity. IEEE Transactions on Electron Devices. Vol. 64, 3114-3119. Accepted, .
  • Zhang Y. (date unknown). Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs. Applied Physics Letters. Vol. 111. Accepted, .
  • Krishnamoorthy S. (date unknown). Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3field-effect transistor. Applied Physics Letters. Vol. 111. Accepted, .
  • Jared M Johnson (date unknown). Atomic Scale Structure and Defects in 2D GaSe Films and Van der Waals Interface. Microscopy and Microanalysis. Vol. 23. Accepted, .
  • Jared M Johnson (date unknown). Point and Extended Defects in Ultra Wide Band Gap β-Ga 2 O 3 Interfaces. Microscopy and Microanalysis. Vol. 23, 1454-1455. Accepted, .
  • Laskar M. (date unknown). Large area single crystal (0001) oriented MoS2. Applied Physics Letters. Vol. 102. Accepted, .
  • Ramesh P. (date unknown). Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures. Applied Physics Letters. Vol. 104. Accepted, .
  • Krishnamoorthy S. (date unknown). GdN nanoisland-based GaN tunnel junctions. Nano Letters. Vol. 13, 2570-2575. Accepted, .
  • Gao H. (date unknown). Optical signatures of deep level defects in Ga2O3. Applied Physics Letters. Vol. 112. Accepted, .
  • Pratiyush A. (date unknown). Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector. Japanese Journal of Applied Physics. Vol. 57. Accepted, .
  • Singh Pratiyush A. (date unknown). High responsivity in molecular beam epitaxy grown β-Ga2O3metal semiconductor metal solar blind deep-UV photodetector. Applied Physics Letters. Vol. 110. Accepted, .
  • Zhang Y. (date unknown). Tunnel-injected sub-260 nm ultraviolet light emitting diodes. Applied Physics Letters. Vol. 110. Accepted, .
  • Zhang Y. (date unknown). Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs. Applied Physics Express. Vol. 9. Accepted, .
  • Zhang Y. (date unknown). Interband tunneling for hole injection in III-nitride ultraviolet emitters. Applied Physics Letters. Vol. 106. Accepted, .
  • Xia Z. (date unknown). Delta Doped Ga2O3 Field Effect Transistors with Regrown Ohmic Contacts. IEEE Electron Device Letters. Vol. 39, 568-571. Accepted, .
  • Sriram Krishnamoorthy (date unknown). Delta-doped β-gallium oxide field-effect transistor. Applied Physics Express. Vol. 10, 5. Accepted, .
  • Akyol F. (date unknown). Low-resistance GaN tunnel homojunctions with 150 kA/cm2current and repeatable negative differential resistance. Applied Physics Letters. Vol. 108. Accepted, .
  • Krishnamoorthy S. (date unknown). Low resistance GaN/InGaN/GaN tunnel junctions. Applied Physics Letters. Vol. 102. Accepted, .
  • Di Lecce V. (date unknown). Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes. Electronics Letters. Vol. 48, 347-348. Accepted, .
  • Akyol F. (date unknown). Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes. Applied Physics Letters. Vol. 100. Accepted, .
  • Lee C. (date unknown). Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates. Journal of Applied Physics. Vol. 121. Accepted, .
  • Joishi C. (date unknown). Low-pressure CVD-grown β-Ga2O3bevel-field-plated Schottky barrier diodes. Applied Physics Express. Vol. 11. Accepted, .
  • Lee C. (date unknown). A self-limiting layer-by-layer etching technique for 2H-MoS2. Applied Physics Express. Vol. 10. Accepted, .
  • Park P. (date unknown). Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs. IEEE Electron Device Letters. Vol. 36, 226-228. Accepted, .
  • T-H Hung (date unknown). Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs. Electron Device Letters, IEEE. Vol. 35, 312-314. Accepted, .
  • Hung T. (date unknown). Interface charge engineering at atomic layer deposited dielectric/III- nitride interfaces. Applied Physics Letters. Vol. 102. Accepted, .
  • Xia Z. (date unknown). Delta doped β-Ga2O3Field Effect Transistors with Regrown Ohmic Contacts. IEEE Electron Device Letters. Accepted, .
  • Sung Park P. (date unknown). Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization. Applied Physics Letters. Vol. 100. Accepted, .
  • Chandan Joishi (date unknown). Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes. Applied Physics Express. Vol. 11, 3. Accepted, .
  • Saleh M. (date unknown). Corrigendum: Electrical and optical properties of Zr doped β-Ga2O3 single crystals (Applied Physics Express (2019) 12 (085502) DOI: 10.7567/1882-0786/ab2b6c). Applied Physics Express. Vol. 12. Accepted, .
  • Gopalan P. (date unknown). Ultrafast THz modulators with WSe2 thin films [Invited]. Optical Materials Express. Vol. 9. Accepted, .
  • Ranga P. (date unknown). Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy (Spotlights 2019). Applied Physics Express. Vol. 12. Accepted, .
  • Akyol F. (date unknown). GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions. Applied Physics Express. Vol. 8. Accepted, .

Research Keywords

  • Inflammation
  • Psychopharmacology

Presentations

  • "Beta- Gallium (Aluminum) Oxide Thin Films & Heterostructures for Efficient Power & High Frequency Electronics"- XXth International Workshop on Physics of Semiconductor Devices: IWPSD 2019; December 17-20, 2019, Kolkata, India (December 2019). , Presented, 2019.
  • “Gallium Oxide Power Electronic Materials and Devices”- University of Minnesota- IPRIME 2019 Annual Meeting- EMD Electronic Materials and Devices Focus- Ultra-wide Gap Materials for High-power Electronics - May 29, 2019. , Presented, 2019.
    https://www.jdpconferences.com/iprime2019/sched/de...
  • Tutorial: Emerging Ultra-Wide Band Gap (UWBG) Power Electronic Devices. , Presented, 2018.
    http://wipda.org/tutorials/
  • A Tutorial on Molecular Beam Epitaxy Growth of Gallium Oxide @ AFRL WPAFB. , Presented, 2018.
  • Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Santosh Swain, Michael Scarpulla, Kelvin Lynn and Sriram Krishnamoorthy, “Schottky Barrier Height Engineering in β-Ga2O3 using a dielectric interlayer”, The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3) 2019 (Poster). , Presented, 2019.
  • Joseph Lyman, and Sriram Krishnamoorthy, “Theoretical Investigation of Infrared Photodetection in Gallium Oxide/ Aluminum Gallium Oxide Quantum Well Structures”, The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3) 2019 (~ 30% acceptance rate for oral presentation). , Presented, 2019.
    https://www.mrs.org/iwgo-3/schedule-gox2019
  • Praneeth Ranga, Arkka Bhattacharya, Luisa Whittaker-Brooks, Sriram Krishnamoorthy, “Growth of Homoepitaxial β-Ga2O3 Films using Far Injection MOVPE Reactor”, The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3) 2019 (Oral Talk Acceptance rate ~ 30%). , Presented, 2019.
  • Praneeth Ranga, Ashwin Rishinaramangalam, Arkka Bhattacharya, Luisa Whittaker-Brooks, Daniel Feezell, Sriram Krishnamoorthy, “MOVPE-GROWN SI-DOPED β-(Al0.25Ga0.75)2O3 THIN FILMS AND HETEROJUNCTIONS”, (Presented by Prof. Krishnamoorthy) 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19) Late News. , Presented, 2019.
  • “Electronic Properties and Defect Energies in Zr-doped β-Ga2O3 Single Crystal,” Jesenovec, J., M. Saleh, S. Swain, A. Bhattacharyya, S. Krishnamoorthy, J. McCloy, K. Lynn. In 30th International Conference of Defects in Semiconductors, Seattle, WA, 2019. (Poster). , Presented, 2019.
  • “Electrical and Optical Properties of Zr doped β-G2O3 Single Crystals Grown by Czochralski Method,” Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In ICCGE-19, Keystone, CO, 2019. (Poster). Award Two awards sponsored by Elsevier and by IUCR for his poster presentation in ICCGE-19 in Keystone, CO. , Presented, 2019.
  • “Electronic Properties of Zr and Hf Doped β-Ga2O3 Single Crystals”, Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In 30th International Conference of Defects in Semiconductors, Seattle, WA, 2019. (Oral Presentation). , Presented, 2019.
  • Praneeth Ranga, Berardi Sensale-Rodriguez, Michael Scarpulla, Sriram Krishnamoorthy, "Low Pressure CVD Growth of N-Type Ga2O3 Thin Films Using Solid Ge Source", 2018 Materials Research Society. , Presented, 2018.
    https://mrsfall2018.zerista.com/event/member/53248...
  • Praneeth Ranga, Sung Beom Cho, Rohan Mishra, Sriram Krishnamoorthy, " Polarization Engineering of ε-(AlGa)2O3/ε-Ga2O3 Heterostructures", Materials Research Society (MRS) Fall meeting (2018). , Presented, 2018.
    https://mrsfall2018.zerista.com/event/member/53461...
  • Praneeth Ranga, Sung Beom Cho, Rohan Mishra, Sriram Krishnamoorthy, "Modeling of 2DEG Formation at Polar ε-(AlGa) 2O3/ε-Ga2O3 Heterojunctions", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). , Presented, 2018.
    http://meetings.aps.org/Meeting/4CS18/Session/L01....
  • Praneeth Ranga, Vivek Sattiraju, Jonathan Ogle, Berardi Sensale-Rodriguez, Luisa Whittaker-Brooks, Michael Scarpulla, Sriram Krishnamoorthy, "N-type Doping in LPCVD-grown β-Ga2O3 Films using Solid Source Dopants", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). , Presented, 2018.
    http://meetings.aps.org/Meeting/4CS18/Session/C01....
  • Joseph Lyman, Sriram Krishnamoorthy,"Intersubband Optical Transitions in Ultra-Wide Bandgap Quantum Well Structures", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). , Presented, 2018.
    http://meetings.aps.org/Meeting/4CS18/Session/C06....
  • Ge and Si-doped LPCVD-grown β- Ga2O3 Thin Films; 3rd US Workshop on Gallium Oxide (GOX 2018). , Presented, 2018.
    https://leconference.weebly.com/uploads/1/1/5/7/11...
  • Yunshan Wang , Peter Dickens , Xiaojuan Ni , Emmanuel Lotubai , Samuel Sprawls , Feng Liu , Sriram Krishnamoorthy , Steve Blair , Kelvin Lynn , Michael Scarpulla and Berardi Sensale Rodriguez, “Photoluminescence from β-Ga2 O3 Bulk Crystals—Spectral Dependences on Incident Wavelength and Polarization”, Electronic Materials Conference 2018. , Presented, 2018.
    https://www.mrs.org/docs/default-source/meetings-e...
  • Prashanth Gopalan, Ashish Chanana, Sriram Krishnamoorthy, Ajay Nahata, Michael Scarpulla and Berardi Sensale Rodriguez,” Exploring Transient Terahertz Carrier Dynamics in LargeArea WSe2 Thin Films”, Electronic Materials Conference 2018. , Presented, 2018.
    https://www.mrs.org/docs/default-source/meetings-e...
  • Hantian Gao , Nick Pronin , Shreyas Muralidharan , Rezaul Karim , Susan M. White , Thaddeus J. Asel , Geoffrey M. Foster , Sriram Krishnamoorthy , Siddharth Rajan , Lei Cao , Holger von Wenckstern , Marius Grundmann , Hongping Zhao , Buguo Wang and Leonard Brillson,” Native Point Defect Identification and Control in Ga2 O3 “, Electronic Materials Conference 2018. , Presented, 2018.
    https://www.mrs.org/docs/default-source/meetings-e...
  • Zhanbo Xia , Chandan Joishi, Sriram Krishnamoorthy , Sanyam Bajaj , Yuewei Zhang , Mark Brenner , Saurabh Lodha and Siddharth Rajan, “DC and RF Characteristics of Submicron Delta-Doped β-Ga2 O3 Field Effect Transistors”, Electronic Materials Conference 2018. , Presented, 2018.
    https://www.mrs.org/docs/default-source/meetings-e...

Research Groups

  • Praneeth Ranga, . Electrical and Computer Engineering. 2017 - present.
  • Arkka Bhattacharyya, . ECE. 2018 - present.
  • Joseph E. Lyman, . ECE. 2018 - 2020. Awards/Scholarships/Stipends: UROP-Fall 2018, UROP- Spring 2019, Office of Undergraduate Research Travel Grant 2019, Barry Goldwater Fellowship.
  • Viveksamin Sattiraju, . ChemE (Masters Project). 2017 - 2018.
  • Carl Peterson, . Electrical and Computer Engineering. 2021 - present.
  • Saurav Roy, . Electrical and Computer Engineering. 2019 - present.

Languages

  • English, Fluent.
  • Hindi, Fluent.
  • Tamil, Fluent.

Geographical Regions of Interest

  • Japan
  • Germany

Grants, Contracts & Research Gifts

  • Acquisition of Ferroelectric Test System for Materials and Devices Research has been selected as the awardee for Research Instrumentation Fund (RIF) - Faculty. PI: - 2020. Total project budget to date: