- 2009-2014 - Ph. D., Electrical and Computer Engineering, The Ohio State University. Project: Gallium Nitride Based Heterostructure Interband Tunnel Junctions
- 2004-2009 - B.E. (Hons.), Electrical and Electronics Engineering, Birla Institute of Technology & Science (BITS), Pilani, India
- 2004-2009 - M.Sc. (Hons), Physics, Birla Institute of Technology & Science (BITS), Pilani, India
My group is interested in exploring novel semiconductor devices and materials to address the global challenges related to energy, health and security. We are particularly interested in wide band gap semiconductors-based (Gallium Oxide, Gallium Nitride) devices for next-generation power electronics, high frequency electronics, high temperature electronics and deep-UV optoelectronics.
Semiconductors-based nanoscale electronic/optoelectronic devices, with focus on material synthesis, electronic transport, design/modeling, nanoscale fabrication, and characterization of devices and materials for energy, health and security applications. Specifically, wide band gap oxide/nitride semiconductor devices for a wide range of applications such as power electronics, ultra-violet optoelectronics, vacuum electronics, and high temperature electronics.