Publications

• Apak E. (date unknown). Photomask ADI, AEI and QA measurements using normal incidence optical-CD metrology. (pp. 708-719). Vol. 5446. Proceedings of SPIE - The International Society for Optical Engineering. Accepted, .
• Hoobler R. (date unknown). Optical critical dimension (OCD) measurements for profile monitoring and control: Applications for mask inspection and fabrication. (pp. 638-645). Vol. 5256. Proceedings of SPIE - The International Society for Optical Engineering. Accepted, .
• Gubiotti T. (date unknown). Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry. (pp. 105-114). Vol. 5041. Proceedings of SPIE - The International Society for Optical Engineering. Accepted, .
• Zavecz T. (date unknown). Models for reticle performance and comparison of direct measurement. (pp. 1029-1039). Vol. 5754. Proceedings of SPIE - The International Society for Optical Engineering. Accepted, .
• Dusa M. (date unknown). Intra-wafer CDU characterization to determine process and focus contributions based on Scatterometry metrology. (pp. 93-104). Vol. 5378. Proceedings of SPIE - The International Society for Optical Engineering. Accepted, .
• Hoobler R. (date unknown). Low-Temperature Rate Coefficients for Reactions of the Ethynyl Radical (C2H) with C3H4 Isomers Methylacetylene and Allene. Journal of Physical Chemistry A. Vol. 103, 1342-1346. Accepted, .
• Hoobler R. (date unknown). Rate coefficients for reactions of ethynyl radical (C2H) with HCN and CH3CN: Implications for the formation of complex nitriles on Titan. Journal of Geophysical Research E: Planets. Vol. 102, 28717-28723. Accepted, .
• Shivaprasad D. (date unknown). Measurement of semi-isolated polysilicon gate structure with the optical critical dimension technique. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 21, 2517-2523. Accepted, .
• Lee S. (date unknown). Direct measurements of rate coefficients for the reaction of ethynyl radical (C2H) with C2H2 at 90 and 120 K using a pulsed Laval nozzle apparatus. Journal of Geophysical Research E: Planets. Vol. 105, 15085-15090. Accepted, .
• Gise P. (date unknown). Integrated metrology adopts stronger APC role. Semiconductor International. Vol. 27, 60-62. Accepted, .
• Hoobler R. (date unknown). Mask metrology using: OCD for profiling. Solid State Technology. Vol. 48, 35-38. Accepted, .
• Lee S. (date unknown). A pulsed Lavai nozzle apparatus with laser ionization mass spectroscopy for direct measurements of rate coefficients at low temperatures with condensable gases. Review of Scientific Instruments. Vol. 71, 1816-1823. Accepted, .
• Hull R. (date unknown). Conformation of NADH studied by fluorescence excitation transfer spectroscopy. Biophysical Chemistry. Vol. 90, 9-16. Accepted, .
• Hoobler R. (date unknown). Effects of atomic orientation on atom-dimer equilibria in alkali-metal vapors. Physical Review A - Atomic, Molecular, and Optical Physics. Vol. 57, 1967-1971. Accepted, .
• Hoobler R. (date unknown). Low-temperature rate coefficients for reactions of ethynyl radical (C 2H) with propane, isobutane, n-butane, and neopentane. Journal of Physical Chemistry A. Vol. 101, 1338-1342. Accepted, .
• Hoobler R. (date unknown). Normal-incidence spectroscopic ellipsometry for optical CD metrology. Microlithography World. Vol. 12, 12-14+20. Accepted, .
• Hoobler R. (date unknown). Characterization of interfacial layers and surface roughness using spectroscopic reflectance, spectroscopic ellipsometry and atomic force microscopy. Proceedings of SPIE-The International Society for Optical Engineering. Vol. 4689 II, 756-764. Accepted, .