Publications

  • Anamika Singh Pratiyush, Sriram Krishnamoorthy, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N Nath, “Advances in Ga2O3 solar-blind UV photodetectors”, In Gallium Oxide, pp. 369-399. Elsevier, 2019. Published, 01/2019.
  • Gopalan P., Chanana A., Krishnamoorthy S., Nahata A., Scarpulla M. & Sensalerodriguez B. (2019). Ultrafast THz modulators with WSe2 thin films [Invited]. Optical Materials Express. Vol. 9. Published, 01/01/2019.
  • Saleh M., Bhattacharyya A., Varley J., Swain S., Jesenovec J., Krishnamoorthy S. & Lynn K. (2019). Corrigendum: Electrical and optical properties of Zr doped β-Ga2O3 single crystals (Applied Physics Express (2019) 12 (085502) DOI: 10.7567/1882-0786/ab2b6c). Applied Physics Express. Vol. 12. Published, 01/01/2019.
  • Ranga P., Rishinaramangalam A., Varley J., Bhattacharyya A., Feezell D. & Krishnamoorthy S. (2019). Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy. Applied Physics Express. Vol. 12. Published, 01/01/2019.
  • Wang Y., Dickens P., Varley J., Ni X., Lotubai E., Sprawls S., Liu F., Lordi V., Krishnamoorthy S., Blair S., Lynn K., Scarpulla M. & Sensale-Rodriguez B. (2018). Incident wavelength and polarization dependence of spectral shifts in β-Ga2O3 UV photoluminescence. Scientific Reports. Vol. 8. Published, 12/01/2018.
  • Gopalan P., Chanana A., Krishnamoorthy S., Nahata A., Scarpulla M. & Sensale-Rodriguez B. (2018). Ultrafast terahertz modulator based on metamaterial-integrated WSe2 thin-films. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. Vol. 2018-September. Published, 10/25/2018.
  • Gao H., Muralidharan S., Pronin N., Karim M., White S., Asel T., Foster G., Krishnamoorthy S., Rajan S., Cao L., Higashiwaki M., Von Wenckstern H., Grundmann M., Zhao H., Look D. & Brillson L. (2018). Optical signatures of deep level defects in Ga2O3. Applied Physics Letters. Vol. 112. Published, 06/11/2018.
  • Pratiyush A., Krishnamoorthy S., Kumar S., Xia Z., Muralidharan R., Rajan S. & Nath D. (2018). Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector. Japanese Journal of Applied Physics. Vol. 57. Published, 06/01/2018.
  • Xia Z., Joishi C., Krishnamoorthy S., Bajaj S., Zhang Y., Brenner M., Lodha S. & Rajan S. (2018). Delta Doped Ga2O3 Field Effect Transistors with Regrown Ohmic Contacts. IEEE Electron Device Letters. Vol. 39, 568-571. Published, 04/01/2018.
  • Joishi C., Rafique S., Xia Z., Han L., Krishnamoorthy S., Zhang Y., Lodha S., Zhao H. & Rajan S. (2018). Low-pressure CVD-grown β-Ga2O3bevel-field-plated Schottky barrier diodes. Applied Physics Express. Vol. 11. Published, 03/01/2018.
  • Xia Z., Joishi C., Krishnamoorthy S., Bajaj S., Zhang Y., Brenner M., Lodha S. & Rajan S. (2018). Delta doped β-Ga2O3Field Effect Transistors with Regrown Ohmic Contacts. IEEE Electron Device Letters. Published, 02/13/2018.
  • Joishi, Chandan, Subrina Rafique, Zhanbo Xia, Lu Han, Sriram Krishnamoorthy, Yuewei Zhang, Saurabh Lodha, Hongping Zhao, and Siddharth Rajan. "Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes." Applied Physics Express 11, no. 3 (2018): 031101. Published, 02/2018.
  • Akyol F., Zhang Y., Krishnamoorthy S. & Rajan S. (2017). Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content. Vol. 10, Applied Physics Express. Published, 12/01/2017.
  • Lee C., Krishnamoorthy S., Paul P., O'Hara D., Brenner M., Kawakami R., Arehart A. & Rajan S. (2017). Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy. Vol. 111, Applied Physics Letters. Published, 11/13/2017.
  • Bajaj S., Yang Z., Akyol F., Park P., Zhang Y., Price A., Krishnamoorthy S., Meyer D. & Rajan S. (2017). Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity. (pp. 3114-3119). Vol. 64, IEEE Transactions on Electron Devices. Published, 08/01/2017.
  • Bajaj S., Yang Z., Akyol F., Park P., Zhang Y., Sohel S., Krishnamoorthy S., Meyer D. & Rajan S. (2017). Small-signal characteristics of graded AlGaN channel PolFETs. Device Research Conference - Conference Digest, DRC. Published, 08/01/2017.
  • Zhang Y., Krishnamoorthy S., Akyol F., Johnson J., Allerman A., Moseley M., Armstrong A., Hwang J. & Rajan S. (2017). Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs. Vol. 111, Applied Physics Letters. Published, 07/31/2017.
  • Krishnamoorthy S., Xia Z., Joishi C., Zhang Y., McGlone J., Johnson J., Brenner M., Arehart A., Hwang J., Lodha S. & Rajan S. (2017). Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3field-effect transistor. Vol. 111, Applied Physics Letters. Published, 07/10/2017.
  • Jared M Johnson & Sriram Krishnamoorthy, Siddharth Rajan, Jinwoo Hwang (2017). Point and Extended Defects in Ultra Wide Band Gap β-Ga 2 O 3 Interfaces. Microscopy and Microanalysis. Vol. 23, 1454-1455. Published, 07/2017.
  • Johnson, Jared M., Choong Hee Lee, Sriram Krishnamoorthy, Siddharth Rajan, and Jinwoo Hwang. "Atomic Scale Structure and Defects in 2D GaSe Films and Van der Waals Interface." Microscopy and Microanalysis 23, no. S1 (2017): 1728-1729. Published, 07/2017.
  • Singh Pratiyush A., Krishnamoorthy S., Vishnu Solanke S., Xia Z., Muralidharan R., Rajan S. & Nath D. (2017). High responsivity in molecular beam epitaxy grown β-Ga2O3metal semiconductor metal solar blind deep-UV photodetector. Vol. 110, Applied Physics Letters. Published, 05/29/2017.
  • Zhang Y., Krishnamoorthy S., Akyol F., Bajaj S., Allerman A., Moseley M., Armstrong A. & Rajan S. (2017). Tunnel-injected sub-260 nm ultraviolet light emitting diodes. Vol. 110, Applied Physics Letters. Published, 05/15/2017.
  • Krishnamoorthy, Sriram, Zhanbo Xia, Sanyam Bajaj, Mark Brenner, and Siddharth Rajan. "Delta-doped β-gallium oxide field-effect transistor." Applied Physics Express 10, no. 5 (2017): 051102. Published, 04/2017.
  • Lee C., Krishnamoorthy S., O'Hara D., Brenner M., Johnson J., Jamison J., Myers R., Kawakami R., Hwang J. & Rajan S. (2017). Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates. Vol. 121, Journal of Applied Physics. Published, 03/07/2017.
  • Lee C., Lee E., McCulloch W., Jamal-Eddine Z., Krishnamoorthy S., Newburger M., Kawakami R., Wu Y. & Rajan S. (2017). A self-limiting layer-by-layer etching technique for 2H-MoS2. Vol. 10, Applied Physics Express. Published, 03/01/2017.
  • Zhang Y., Krishnamoorthy S., Akyol F., Allerman A., Moseley M., Armstrong A. & Rajan S. (2016). Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes. Vol. 109, Applied Physics Letters. Published, 11/07/2016.
  • Gür E., Akyol F., Krishnamoorthy S., Rajan S. & Ringel S. (2016). Deep level defects in N-rich and In-rich InxGa1−XN: in composition dependence. (pp. 67-71). Vol. 99, Superlattices and Microstructures. Published, 11/01/2016.
  • Krishnamoorthy S., Lee E., Lee C., Zhang Y., McCulloch W., Johnson J., Hwang J., Wu Y. & Rajan S. (2016). High current density 2D/3D MoS2/GaN Esaki tunnel diodes. Vol. 109, Applied Physics Letters. Published, 10/31/2016.
  • Bajaj S., Akyol F., Krishnamoorthy S., Zhang Y. & Rajan S. (2016). AlGaN channel field effect transistors with graded heterostructure ohmic contacts. Vol. 109, Applied Physics Letters. Published, 09/26/2016.
  • Zhang Y., Krishnamoorthy S., Akyol F., Allerman A., Moseley M., Armstrong A. & Rajan S. (2016). Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions. Vol. 109, Applied Physics Letters. Published, 09/19/2016.
  • Yang Z., Zhang Y., Krishnamoorthy S., Nath D., Khurgin J. & Rajan S. (2016). Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter. Device Research Conference - Conference Digest, DRC. Vol. 2016-August. Published, 08/22/2016.
  • Bajaj S., Akyol F., Krishnamoorthy S., Zhang Y., Armstrong A., Allerman A. & Rajan S. (2016). Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics. Device Research Conference - Conference Digest, DRC. Vol. 2016-August. Published, 08/22/2016.
  • Zhang Y., Allerman A., Krishnamoorthy S., Akyol F., Moseley M., Armstrong A. & Rajan S. (2016). Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs. Vol. 9, Applied Physics Express. Published, 05/01/2016.
  • Akyol F., Krishnamoorthy S., Zhang Y., Johnson J., Hwang J. & Rajan S. (2016). Low-resistance GaN tunnel homojunctions with 150 kA/cm2current and repeatable negative differential resistance. Vol. 108, Applied Physics Letters. Published, 03/28/2016.
  • Bajaj S., Hung T., Akyol F., Krishnamoorthy S., Khandaker S., Armstrong A., Allerman A. & Rajan S. (2015). Power switching transistors based on GaN and AlGaN channels. WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications. 16-20. Published, 12/30/2015.
  • Lee C., McCulloch W., Lee E., Ma L., Krishnamoorthy S., Hwang J., Wu Y. & Rajan S. (2015). Transferred large area single crystal MoS2field effect transistors. Vol. 107, Applied Physics Letters. Published, 11/09/2015.
  • Bajaj S., Shoron O., Park P., Krishnamoorthy S., Akyol F., Hung T., Reza S., Chumbes E., Khurgin J. & Rajan S. (2015). Density-dependent electron transport and precise modeling of GaN high electron mobility transistors. Vol. 107, Applied Physics Letters. Published, 10/12/2015.
  • Siddharth Rajan & Sriram Krishnamoorthy, Fatih Akyol (2015). Gallium Nitride (GaN): Physics, Devices, and Technology - Chapter 9: Gallium Nitride-Based Interband Tunnel Junctions. (pp. 299-320). Vol. 47, CRC Press. Published, 10/2015.
    https://books.google.com/books?hl=en&lr=&id=l3i9Cg...
  • Lee E., Lee C., Paul P., Ma L., McCulloch W., Krishnamoorthy S., Wu Y., Arehart A. & Rajan S. (2015). Layer-transferred MoS<inf>2</inf>/GaN PN diodes. Vol. 107, Applied Physics Letters. Published, 09/07/2015.
  • Zhang Y., Krishnamoorthy S., Akyol F., Khandaker S., Allerman A., Moseley M., Armstrong A. & Rajan S. (2015). Sub 300 nm wavelength III-Nitride tunnel-injected ultraviolet LEDs. Device Research Conference - Conference Digest, DRC. Vol. 2015-August, 69-70. Published, 08/03/2015.
  • Bajaj S., Shoron O., Park P., Krishnamoorthy S., Akyol F., Hung T., Reza S., Chumbes E., Khurgin J. & Rajan S. (2015). Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs. Device Research Conference - Conference Digest, DRC. Vol. 2015-August, 33-34. Published, 08/03/2015.
  • Yang Z., Zhang Y., Krishnamoorthy S., Nath D., Khurgin J. & Rajan S. (2015). Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors. Device Research Conference - Conference Digest, DRC. Vol. 2015-August, 53-54. Published, 08/03/2015.
  • Zhang Y., Krishnamoorthy S., Johnson J., Akyol F., Allerman A., Moseley M., Armstrong A., Hwang J. & Rajan S. (2015). Interband tunneling for hole injection in III-nitride ultraviolet emitters. Vol. 106, Applied Physics Letters. Published, 04/06/2015.
  • Park P., Krishnamoorthy S., Bajaj S., Nath D. & Rajan S. (2015). Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs. (pp. 226-228). Vol. 36, IEEE Electron Device Letters. Published, 03/01/2015.
  • Akyol F., Krishnamoorthy S., Zhang Y. & Rajan S. (2015). GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions. Vol. 8, Applied Physics Express. Published, 01/01/2015.
  • Krishnamoorthy S., Akyol F. & Rajan S. (2014). InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes. Vol. 105, Applied Physics Letters. Published, 10/06/2014.
  • Ramesh P., Krishnamoorthy S., Rajan S. & Washington G. (2014). Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures. Vol. 104, Applied Physics Letters. Published, 06/16/2014.
  • Hung, Ting-Hsiang, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, and Siddharth Rajan. "Interface charge engineering for enhancement-mode GaN MISHEMTs." IEEE Electron Device Letters 35, no. 3 (2014): 312-314. Published, 03/2014.
  • Krishnamoorthy S., Akyol F. & Rajan S. (2014). III-nitride tunnel junctions for efficient solid state lighting. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8986. Published, 01/01/2014.
  • Hung T., Park P., Krishnamoorthy S., Nath D., Bajaj S. & Rajan S. (2014). Lateral energy band engineering of Al2O3/III-nitride interfaces. Device Research Conference - Conference Digest, DRC. 131-132. Published, 01/01/2014.
  • Yang J., Cui S., Ma T., Hung T., Nath D., Krishnamoorthy S. & Rajan S. (2013). Determination of trap energy levels in AlGaN/GaN HEMT. Device Research Conference - Conference Digest, DRC. 79-80. Published, 12/16/2013.
  • Hung T., Krishnamoorthy S., Nath D., Park P. & Rajan S. (2013). Interface charge engineering in GaN-based MIS-HEMTs. 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 147-150. Published, 12/01/2013.
  • Yang J., Cui S., Ma T., Hung T., Nath D., Krishnamoorthy S. & Rajan S. (2013). Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors. Vol. 103, Applied Physics Letters. Published, 11/25/2013.
  • Hung T., Esposto M., Nath D., Krishnamoorthy S., Park P. & Rajan S. (2013). Study of interfacial charge properties and engineering of ALD dielectric/III-nitride interfaces. 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. 191-194. Published, 11/15/2013.
  • Yang J., Cui S., Ma T., Hung T., Nath D., Krishnamoorthy S. & Rajan S. (2013). A study of electrically active traps in AlGaN/GaN high electron mobility transistor. Vol. 103, Applied Physics Letters. Published, 10/21/2013.
  • Akyol F., Krishnamoorthy S. & Rajan S. (2013). Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop. Vol. 103, Applied Physics Letters. Published, 08/19/2013.
  • Laskar M., Ma L., Kannappan S., Sung Park P., Krishnamoorthy S., Nath D., Lu W., Wu Y. & Rajan S. (2013). Large area single crystal (0001) oriented MoS2. Vol. 102, Applied Physics Letters. Published, 06/24/2013.
  • Krishnamoorthy S., Kent T., Yang J., Park P., Myers R. & Rajan S. (2013). GdN nanoisland-based GaN tunnel junctions. (pp. 2570-2575). Vol. 13, Nano Letters. Published, 06/12/2013.
  • Krishnamoorthy S., Akyol F., Park P. & Rajan S. (2013). Low resistance GaN/InGaN/GaN tunnel junctions. Vol. 102, Applied Physics Letters. Published, 03/18/2013.
  • Hung T., Krishnamoorthy S., Esposto M., Neelim Nath D., Sung Park P. & Rajan S. (2013). Interface charge engineering at atomic layer deposited dielectric/III- nitride interfaces. Vol. 102, Applied Physics Letters. Published, 02/18/2013.
  • Krishnamoorthy S., Akyol F., Yang J., Park P., Myers R. & Rajan S. (2012). Record low tunnel junction specific resistivity (<3×10-4Ωcm2) in GaN inter-band tunnel junctions. Device Research Conference - Conference Digest, DRC. 157-158. Published, 10/05/2012.
  • Growden T., Krishnamoorthy S., Nath D., Ramesh A., Rajan S. & Berger P. (2012). Methods for attaining high interband tunneling current in III-Nitrides. Device Research Conference - Conference Digest, DRC. 163-164. Published, 10/05/2012.
  • Ramesh P., Krishnamoorthy S., Rajan S. & Washington G. (2012). Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications. Vol. 21, Smart Materials and Structures. Published, 09/01/2012.
  • Di Lecce V., Krishnamoorthy S., Esposto M., Hung T., Chini A. & Rajan S. (2012). Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes. (pp. 347-348). Vol. 48, Electronics Letters. Published, 03/15/2012.
  • Akyol F., Nath D., Krishnamoorthy S., Park P. & Rajan S. (2012). Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes. Vol. 100, Applied Physics Letters. Published, 03/12/2012.
  • Sung Park P., Nath D., Krishnamoorthy S. & Rajan S. (2012). Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization. Vol. 100, Applied Physics Letters. Published, 02/06/2012.
  • Krishnamoorthy S., Park P. & Rajan S. (2011). Demonstration of forward inter-band tunneling in GaN by polarization engineering. Vol. 99, Applied Physics Letters. Published, 12/05/2011.
  • Ramesh P., Washington G., Krishnamoorthy S. & Rajan S. (2011). Fabrication and characterization of Gallium Nitride unimorphs for optical MEMS applications. ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems, SMASIS 2011. Vol. 1, 201-209. Published, 12/01/2011.
  • Krishnamoorthy S., Park P. & Rajan S. (2011). III-nitride tunnel diodes with record forward tunnel current density. Device Research Conference - Conference Digest, DRC. Published, 12/01/2011.
  • Gür E., Zhang Z., Krishnamoorthy S., Rajan S. & Ringel S. (2011). Erratum: Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies (Applied Physics Letters (2011) 99 (092109)). Vol. 99, Applied Physics Letters. Published, 11/28/2011.
  • Esposto M., Krishnamoorthy S., Nath D., Bajaj S., Hung T. & Rajan S. (2011). Electrical properties of atomic layer deposited aluminum oxide on gallium nitride. Vol. 99, Applied Physics Letters. Published, 09/26/2011.
  • Krishnamoorthy S., Nath D., Akyol F., Park P., Esposto M. & Rajan S. (2010). Polarization-engineered GaN/InGaN/GaN tunnel diodes. Vol. 97, Applied Physics Letters. Published, 11/15/2010.

Research Keywords

  • Semiconductor materials and devices
  • Optoelectronics
  • Nanofabrication
  • Materials, Engineering Properties
  • Electronic Devices
  • Compound Semiconductors

Presentations

  • "Beta- Gallium (Aluminum) Oxide Thin Films & Heterostructures for Efficient Power & High Frequency Electronics"- XXth International Workshop on Physics of Semiconductor Devices: IWPSD 2019; December 17-20, 2019, Kolkata, India (December 2019). Invited Talk/Keynote, Presented, 12/19/2019.
  • Joseph Lyman, and Sriram Krishnamoorthy, “Theoretical Investigation of Infrared Photodetection in Gallium Oxide/ Aluminum Gallium Oxide Quantum Well Structures”, The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3) 2019 (~ 30% acceptance rate for oral presentation). Conference Paper, Refereed, Presented, 08/14/2019.
    https://www.mrs.org/iwgo-3/schedule-gox2019
  • Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Santosh Swain, Michael Scarpulla, Kelvin Lynn and Sriram Krishnamoorthy, “Schottky Barrier Height Engineering in β-Ga2O3 using a dielectric interlayer”, The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3) 2019 (Poster). Conference Paper, Refereed, Presented, 08/14/2019.
  • Praneeth Ranga, Arkka Bhattacharya, Luisa Whittaker-Brooks, Sriram Krishnamoorthy, “Growth of Homoepitaxial β-Ga2O3 Films using Far Injection MOVPE Reactor”, The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3) 2019 (Oral Talk Acceptance rate ~ 30%). Conference Paper, Refereed, Presented, 08/13/2019.
  • Praneeth Ranga, Ashwin Rishinaramangalam, Arkka Bhattacharya, Luisa Whittaker-Brooks, Daniel Feezell, Sriram Krishnamoorthy, “MOVPE-GROWN SI-DOPED β-(Al0.25Ga0.75)2O3 THIN FILMS AND HETEROJUNCTIONS”, (Presented by Prof. Krishnamoorthy) 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19) Late News. Conference Paper, Refereed, Presented, 07/31/2019.
  • “Electronic Properties of Zr and Hf Doped β-Ga2O3 Single Crystals”, Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In 30th International Conference of Defects in Semiconductors, Seattle, WA, 2019. (Oral Presentation). Conference Paper, Refereed, Presented, 07/2019.
  • “Electrical and Optical Properties of Zr doped β-G2O3 Single Crystals Grown by Czochralski Method,” Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In ICCGE-19, Keystone, CO, 2019. (Poster). Award Two awards sponsored by Elsevier and by IUCR for his poster presentation in ICCGE-19 in Keystone, CO. Conference Paper, Refereed, Presented, 07/2019.
  • “Electronic Properties and Defect Energies in Zr-doped β-Ga2O3 Single Crystal,” Jesenovec, J., M. Saleh, S. Swain, A. Bhattacharyya, S. Krishnamoorthy, J. McCloy, K. Lynn. In 30th International Conference of Defects in Semiconductors, Seattle, WA, 2019. (Poster). Conference Paper, Refereed, Presented, 07/2019.
  • “Gallium Oxide Power Electronic Materials and Devices”- University of Minnesota- IPRIME 2019 Annual Meeting- EMD Electronic Materials and Devices Focus- Ultra-wide Gap Materials for High-power Electronics - May 29, 2019 . Invited Talk/Keynote, Presented, 05/29/2019.
    https://www.jdpconferences.com/iprime2019/sched/de...
  • Praneeth Ranga, Berardi Sensale-Rodriguez, Michael Scarpulla, Sriram Krishnamoorthy, "Low Pressure CVD Growth of N-Type Ga2O3 Thin Films Using Solid Ge Source", 2018 Materials Research Society . Conference Paper, Refereed, Presented, 11/27/2018.
    https://mrsfall2018.zerista.com/event/member/53248...
  • Praneeth Ranga, Sung Beom Cho, Rohan Mishra, Sriram Krishnamoorthy, " Polarization Engineering of ε-(AlGa)2O3/ε-Ga2O3 Heterostructures", Materials Research Society (MRS) Fall meeting (2018). Conference Paper, Refereed, Presented, 11/26/2018.
    https://mrsfall2018.zerista.com/event/member/53461...
  • Tutorial: Emerging Ultra-Wide Band Gap (UWBG) Power Electronic Devices. Invited Talk/Keynote, Presented, 10/31/2018.
    http://wipda.org/tutorials/
  • Praneeth Ranga, Sung Beom Cho, Rohan Mishra, Sriram Krishnamoorthy, "Modeling of 2DEG Formation at Polar ε-(AlGa) 2O3/ε-Ga2O3 Heterojunctions", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). Conference Paper, Refereed, Presented, 10/13/2018.
    http://meetings.aps.org/Meeting/4CS18/Session/L01....
  • Praneeth Ranga, Vivek Sattiraju, Jonathan Ogle, Berardi Sensale-Rodriguez, Luisa Whittaker-Brooks, Michael Scarpulla, Sriram Krishnamoorthy, "N-type Doping in LPCVD-grown β-Ga2O3 Films using Solid Source Dopants", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). Conference Paper, Refereed, Presented, 10/12/2018.
    http://meetings.aps.org/Meeting/4CS18/Session/C01....
  • Joseph Lyman, Sriram Krishnamoorthy,"Intersubband Optical Transitions in Ultra-Wide Bandgap Quantum Well Structures", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). Conference Paper, Refereed, Presented, 10/12/2018.
    http://meetings.aps.org/Meeting/4CS18/Session/C06....
  • A Tutorial on Molecular Beam Epitaxy Growth of Gallium Oxide @ AFRL WPAFB . Invited Talk/Keynote, Presented, 08/17/2018.
  • Ge and Si-doped LPCVD-grown β- Ga2O3 Thin Films; 3rd US Workshop on Gallium Oxide (GOX 2018) . Conference Paper, Refereed, Presented, 08/15/2018.
    https://leconference.weebly.com/uploads/1/1/5/7/11...
  • Yunshan Wang , Peter Dickens , Xiaojuan Ni , Emmanuel Lotubai , Samuel Sprawls , Feng Liu , Sriram Krishnamoorthy , Steve Blair , Kelvin Lynn , Michael Scarpulla and Berardi Sensale Rodriguez, “Photoluminescence from β-Ga2 O3 Bulk Crystals—Spectral Dependences on Incident Wavelength and Polarization”, Electronic Materials Conference 2018. Conference Paper, Refereed, Presented, 06/29/2018.
    https://www.mrs.org/docs/default-source/meetings-e...
  • Prashanth Gopalan, Ashish Chanana, Sriram Krishnamoorthy, Ajay Nahata, Michael Scarpulla and Berardi Sensale Rodriguez,” Exploring Transient Terahertz Carrier Dynamics in LargeArea WSe2 Thin Films”, Electronic Materials Conference 2018. Conference Paper, Refereed, Presented, 06/28/2018.
    https://www.mrs.org/docs/default-source/meetings-e...
  • Hantian Gao , Nick Pronin , Shreyas Muralidharan , Rezaul Karim , Susan M. White , Thaddeus J. Asel , Geoffrey M. Foster , Sriram Krishnamoorthy , Siddharth Rajan , Lei Cao , Holger von Wenckstern , Marius Grundmann , Hongping Zhao , Buguo Wang and Leonard Brillson,” Native Point Defect Identification and Control in Ga2 O3 “, Electronic Materials Conference 2018. Conference Paper, Refereed, Presented, 06/28/2018.
    https://www.mrs.org/docs/default-source/meetings-e...
  • Zhanbo Xia , Chandan Joishi, Sriram Krishnamoorthy , Sanyam Bajaj , Yuewei Zhang , Mark Brenner , Saurabh Lodha and Siddharth Rajan, “DC and RF Characteristics of Submicron Delta-Doped β-Ga2 O3 Field Effect Transistors”, Electronic Materials Conference 2018. Conference Paper, Refereed, Presented, 06/27/2018.
    https://www.mrs.org/docs/default-source/meetings-e...

Research Groups

  • Carl Peterson, Graduate Student. Electrical and Computer Engineering. 02/2021 - present.
  • Saurav Roy, Graduate Student. Electrical and Computer Engineering. 08/2019 - present.
  • Praneeth Ranga, Graduate Student. Electrical and Computer Engineering. 08/2017 - present.
  • Arkka Bhattacharyya, Graduate Student. ECE. 08/2018 - present.
  • Joseph E. Lyman, Undergraduate Student. ECE. 02/2018 - 05/2020. Awards/Scholarships/Stipends: UROP-Fall 2018, UROP- Spring 2019, Office of Undergraduate Research Travel Grant 2019, Barry Goldwater Fellowship.
  • Viveksamin Sattiraju, Graduate Student. ChemE (Masters Project). 09/2017 - 07/2018.

Languages

  • English, fluent.
  • Hindi, fluent.
  • Tamil, fluent.

Geographical Regions of Interest

  • Germany
  • Japan
  • Southern Asia

Grants, Contracts & Research Gifts

  • Acquisition of Ferroelectric Test System for Materials and Devices Research has been selected as the awardee for Research Instrumentation Fund (RIF) - Faculty . PI: Sriram Krishnamoorthy. University of Utah VP Research - Research Instrumentation Funds, 12/01/2019 - 12/31/2020. Total project budget to date: $18,815.00