Ray J. Hoobler portrait
  • Associate Instructor, Master Of Science & Tech

Publications

  • Zavecz T. & Hoobler R. (2005). Models for reticle performance and comparison of direct measurement. (pp. 1029-1039). Vol. 5754. Proceedings of SPIE - The International Society for Optical Engineering. Published, 10/03/2005.
  • Hoobler R. & Gise P. (2005). Mask metrology using: OCD for profiling. Solid State Technology. Vol. 48, 35-38. Published, 04/01/2005.
  • Apak E., Sarathy T., McGahan W., Rovira P. & Hoobler R. (2004). Photomask ADI, AEI and QA measurements using normal incidence optical-CD metrology. (pp. 708-719). Vol. 5446. Proceedings of SPIE - The International Society for Optical Engineering. Published, 12/01/2004.
  • Dusa M., Moerman R., Singh B., Friedberg P., Hoobler R. & Zavecz T. (2004). Intra-wafer CDU characterization to determine process and focus contributions based on Scatterometry metrology. (pp. 93-104). Vol. 5378. Proceedings of SPIE - The International Society for Optical Engineering. Published, 06/28/2004.
  • Gise P. & Hoobler R. (2004). Integrated metrology adopts stronger APC role. Semiconductor International. Vol. 27, 60-62. Published, 05/01/2004.
  • Hoobler R. & Apak E. (2003). Optical critical dimension (OCD) measurements for profile monitoring and control: Applications for mask inspection and fabrication. (pp. 638-645). Vol. 5256. Proceedings of SPIE - The International Society for Optical Engineering. Published, 12/01/2003.
  • Gubiotti T., Jacy D. & Hoobler R. (2003). Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry. (pp. 105-114). Vol. 5041. Proceedings of SPIE - The International Society for Optical Engineering. Published, 11/27/2003.
  • Shivaprasad D., Hu J., Tabet M., Hoobler R., Mui D. & Liu W. (2003). Measurement of semi-isolated polysilicon gate structure with the optical critical dimension technique. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 21, 2517-2523. Published, 11/01/2003.
  • Hoobler R. (2003). Normal-incidence spectroscopic ellipsometry for optical CD metrology. Microlithography World. Vol. 12, 12-14+20. Published, 02/01/2003.
  • Hoobler R., Korlahalli R., Boltich E. & Serafin J. (2002). Characterization of interfacial layers and surface roughness using spectroscopic reflectance, spectroscopic ellipsometry and atomic force microscopy. Proceedings of SPIE-The International Society for Optical Engineering. Vol. 4689 II, 756-764. Published, 01/01/2002.
  • Hull R., Conger P. & Hoobler R. (2001). Conformation of NADH studied by fluorescence excitation transfer spectroscopy. Biophysical Chemistry. Vol. 90, 9-16. Published, 03/15/2001.
  • Lee S., Samuels D., Hoobler R. & Leone S. (2000). Direct measurements of rate coefficients for the reaction of ethynyl radical (C2H) with C2H2 at 90 and 120 K using a pulsed Laval nozzle apparatus. Journal of Geophysical Research E: Planets. Vol. 105, 15085-15090. Published, 06/25/2000.
  • Lee S., Hoobler R. & Leone S. (2000). A pulsed Lavai nozzle apparatus with laser ionization mass spectroscopy for direct measurements of rate coefficients at low temperatures with condensable gases. Review of Scientific Instruments. Vol. 71, 1816-1823. Published, 04/01/2000.
  • Hoobler R. & Leone S. (1999). Low-Temperature Rate Coefficients for Reactions of the Ethynyl Radical (C2H) with C3H4 Isomers Methylacetylene and Allene. Journal of Physical Chemistry A. Vol. 103, 1342-1346. Published, 12/01/1999.
  • Hoobler R. & Bernheim R. (1998). Effects of atomic orientation on atom-dimer equilibria in alkali-metal vapors. Physical Review A - Atomic, Molecular, and Optical Physics. Vol. 57, 1967-1971. Published, 03/01/1998.
  • Hoobler R. & Leone S. (1997). Rate coefficients for reactions of ethynyl radical (C2H) with HCN and CH3CN: Implications for the formation of complex nitriles on Titan. Journal of Geophysical Research E: Planets. Vol. 102, 28717-28723. Published, 12/01/1997.
  • Hoobler R., Opansky B. & Leone S. (1997). Low-temperature rate coefficients for reactions of ethynyl radical (C 2H) with propane, isobutane, n-butane, and neopentane. Journal of Physical Chemistry A. Vol. 101, 1338-1342. Published, 02/13/1997.