Gerald Stringfellow portrait
  • Distinguished Professor, Elect & Computer Engineering
  • Distinguished Professor, Materials Science and Engineering
801-581-8387

Publications

  • G B Stringfellow (2021). Epitaxial Growth of Metastable Semiconductor Alloys. Journal of Crystal Growth. Vol. 564, 126065. Published, 02/01/2021.
  • G.B. Stringfellow (2019). Fundamentals of MOVPE Growth. (pp. 19-60). Wiley. Published, 10/01/2019.
  • GB Stringfellow (2017). Organometallic Vapor Phase Epitaxy: Theory and Practice (Chinese Translation). (pp. 512 pages). Peking University Press. Published, 06/30/2017.
  • Thermodynamic Considerations for Epitaxial Growth of Semiconductors, Journal of Crystal Growth, 2017 (available on line). Published, 12/01/2016.
  • Effect of surfactant Sb on In incorporation and island size in thin InGaN layers grown by organometallic vapor phase epitaxy, (with J. Merrill and F. Liu) J. Cryst. Gr. 375, 90-94 (2013). Published, 10/31/2013.
  • Simulation of self-assembled compositional core-shell structures in InGaN nanowires, (with X. Niu, Y.J. Lee, and F. Liu) Phys. Rev. B 85, 165316 (2012). Published, 12/31/2012.
  • Use of nanostructures for high brightness LEDs, invited chapter in, Energy Efficiency and Renewable Energy through Nanotechnology, Ed. L. Zang, Springer, Berlin, 803-843 (2011). Published, 11/01/2011.
  • Phase Separation in Strained Epitaxial InGaN islands, Appl. Phys. Lett. 99, 213102 (2011). Published, 10/01/2011.
  • Nonequilibrium composition profiles of alloy quantum dots and their correlation with the growth mode, Phys. Rev. Lett. 107, 076101 (2011). Published, 06/01/2011.
  • Enhanced cation-substituted p-type doping in GaP from dual-surfactant effects, J. Cryst. Gr. (with J.Y. Zhu and Feng Liu), 312 174-179 (2010). Published, 12/31/2010.
  • Strain-Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State, (with J. Zhu, F. Liu, and S.H. Wei) Phys. Rev. Lett. 105, 195503 (2010). Published, 09/01/2010.
  • Microstructures Produced During the Epitaxial Growth of InGaN Alloys, J. Crystal Growth, 312, 735 (2010). Published, 01/30/2010.
  • Modulated Contrast and Associated Diffracted Intensity of GaPSb layers grown by OMVPE (with T.Y. Seong, B.R. Booker, A.G. Norman, and F. Glas), J. Korean Phys. Soc. 52, 471 (2008). Published, 12/31/2008.
  • Dual-Surfactant effect to enhance Zn-doping in III-V Semiconductor Thin Films (with J.Y. Zhu and Feng Liu), Phys. Rev. Lett. 101, 196103 (2008). Published, 12/31/2008.
  • Effects of surfactant N on Zn, C, and H doping of GaP, (with A.D. Howard), J. Crystal Growth 310, 2702 (2008). Published, 12/31/2008.
  • G.B. Stringfellow, Fundamentals of Vapor Phase Epitaxial Growth Processes, in Perspectives on Inorganic, Organic, and Biological Crystal Growth: From Fundamentals to Applications, ed. M. Skowronski, J. DeYoreo, and C. A. Wang, American Institute of Physics, New York, 2007, pp 48-68. Published, 08/2007.
  • H. Ryu, C.R. Kim, J. Lee, J.Y. Leem, L.P. Sadwick, and G.B. Stringfellow, Chemical Beam Epitaxial Growth of InP and GaP by Using Tertiarybutylbisdimethylaminophosphine, J. Korean Phys. Soc. 51, 2051 (2007). Published, 2007.
  • A.D. Howard and G.B. Stringfellow, Effects of Low Surfactant Sb Coverage on Zn and C Incorporation in GaP, J. Appl. Phys. 102, 074920 (2007). Published, 2007.
  • H. Ryu, M.H. Jeon, J. Y. Leem, H.J. Song, L. Sadwick, and G.B. Stringfellow, Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine, Chemistry and Materials Science and Engineering, 41 (24) (2007). Published, 2007.
  • H.H. Ryu, M.H. Jeon, J.Y. Leem, H.J. Song, G.B. Stringfellow, and L.P. Sadwick, Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine, J. Materials Science 41 (24) (2006). Published, 2006.
  • D.C. Chapman, A.D. Howard, and G.B. Stringfellow, Zn enhancement during surfactant mediated growth of GaInP and GaP, J. Crystal Growth 287, 647 (2006). Published, 2006.
  • A.D. Howard, D.C. Chapman, and G.B. Stringfellow, Effects of surfactants Sb and Bi on the incorporation of Zinc and Carbon in III/V materials grown by OMVPE, J. Appl. Phys. 100, 44904 (2006). Published, 2006.

Research Statement

Presentations

  • Lead off talk at Michael Schieber Memorial Session. Invited Talk/Keynote, Presented, 08/01/2019.
  • Thermodynamic considerations for epitaxial growth of III/V alloys, OMVPE Workshop, AACG National Meeting, Santa Fe, New Mexico, (Plenary Lecture). Invited Talk/Keynote, Presented, 07/31/2017.
  • Thermodynamic Limits on III/V Alloys for Novel Heterostructures, Materials Science & Technology Conference 2016, Salt Lake City, UT. Invited Talk/Keynote, Presented, 10/24/2016.
  • Materials Processes for Light Emitting Diodes, 2016 Scientific Innovation and International Collaboration Summit, Chinese Association for Science and Technology. Invited Talk/Keynote, Presented, 10/14/2016.
  • Thermodynamic Considerations for Epitaxial Growth of Semiconductors, International Conference on Crystal Growth, Nagoya, Japan, August 2016 (Plenary Talk, Frank Prize Lecture). Invited Talk/Keynote, Presented, 08/08/2016.
  • A. Howard and G.B. Stringfellow, Effects of dimethylhydrazine on Zn, C, and H doping of GaP, International Conference on MOVPE, August, 2007. Conference Paper, Presented, 2007.
  • J. Zhu, F. Liu, and G.B. Stringfellow, Dual Surfactant Enhnacement of Doping in GaP, International Conference on Crystal Growth and Epitaxy, August, 2007. Conference Paper, Presented, 2007.
  • G.B. Stringfellow, Fundamentals of Vapor Phase Epitaxial Growth Processes, International School on Crystal Growth, August, 2007. Invited Talk/Keynote, Presented, 2007.